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ANISOTROPIC STEP STIFFNESS FROM A KINETIC MODEL OF EPITAXIAL GROWTH
epitaxial growth island dynamics step edge adatoms edge-atoms surface diffusion step stiffness line tension step edge kinetics kinetic steady state Gibbs–Thomson formula Ehrlich–Schwoebel barrier step permeability
2015/10/16
Starting from a detailed model for the kinetics of a step edge or island boundary, we derive a Gibbs–Thomson-type formula and the associated step stiffness as a function of the step edge orientation a...
We study theoretical aspects of step fluctuations on vicinal surfaces by adding conservative white noise to the Burton-Cabrera-Frank model in one spatial dimension. We consider material deposition fro...
Characterizing equilibrium in epitaxial growth
Characterizing equilibrium epitaxial growth
2015/10/16
Using a kinetic model of epitaxial growth, we describe how geometry controls kinetic pathways through which external deposition influences the state of a vicinal surface. The state of the surface is d...
Small fluctuations in epitaxial growth via conservative noise
Small fluctuations epitaxial growth conservative noise
2015/10/16
We study the combined effect of growth (material deposition from above) and nearest-neighbor entropic and force-dipole interactions in a stochastically perturbed system of N line defects (steps) on a ...
Emergence of step flow from an atomistic scheme of epitaxial growth in 1+1 dimensions
step flow atomistic scheme epitaxial growth 1+1 dimensions
2015/10/16
The Burton-Cabrera-Frank (BCF) model for the flow of line defects (steps) on crystal surfaces has offered useful insights into nanostructure evolution. This model has rested on phenomenological ground...
Epitaxial growth mechanisms of graphene and effects of substrates
Epitaxial growth mechanisms graphene effects of substrates
2012/2/29
The growth process of single layer graphene with and without substrate is investigated using ab-initio, finite temperature molecular dynamic calculations within density functional theory. An understan...
Graphene, a hexagonal sheet of sp2-bonded carbon atoms, has extraordinary properties which hold immense promise for future nanoelectronic applications. Unfor-tunately, the popular preparation methods ...
Fine tuning epitaxial strain in ferroelectrics: PbxSr(1-x)TiO3 on DyScO3
ferroelectrics strain thin films phase diagram phase boundaries
2010/11/24
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From the experi-mental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrat...
Effects of variable anisotropic-strain on the emission of neutral excitons confined in epitaxial quantum dots
Effects of variable anisotropic-strain neutral excitons epitaxial quantum dots
2010/11/22
We study the e ect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in di erent kinds of semiconductor quantum dots (QDs). We find that the light polarization ro...
High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films
High temperature thermoelectric response double-doped SrTiO$_3$ epitaxial films
2010/11/19
SrTiO3 is a promising n-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin lms of SrTiO3 doped with both La and oxygen vacancies have been synthesized by pulsed laser depos...
Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni-Mn-Ga films by co-sputtering
Magnetic shape memory alloys epitaxial films adaptive modulated-martensites twinning
2010/11/19
order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects the variant distributi...
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...
期刊信息
篇名
Investigation of Moseicity of epitaxial mulltryers by the statistical theory of X-ray dnamical diffeeraction
语种
英文
撰写或编译
作者
李明等
第一作者单位
刊物名称
Acta Crystallogrs
页面
1995,A51,P350
出版日期
1995年
月
日
文章...
Growth and superconducting transition of Pr1-xCaxBa2Cu3O7-( (x ( 0.5) epitaxial thin films
2007/7/28
期刊信息
篇名
Growth and superconducting transition of Pr1-xCaxBa2Cu3O7-( (x ( 0.5) epitaxial thin films
语种
英文
撰写或编译
作者
J. Y. Xiang,Z.Y. Liu,J. Li,P. Wang,R. L. Wang,H. P. Yang,Y. Z. Zhang,D. N. Zheng,H.H. ...
期刊信息
篇名
Layered growth modelling of epitaxial growth processes for SiC polytypes
语种
英文
撰写或编译
撰写
作者
Z. Q. Liu and J. Ni
第一作者单位
清华大学
刊物名称
J.Phys.: Condens. Matter
页面
17, 5355 (2005).
出版日期
2005年
月
日
文章标识...