搜索结果: 1-15 共查到“理学 Nanowires”相关记录32条 . 查询时间(0.39 秒)
Au Nanowires-MWCNTs修饰电极对葡萄糖的催化氧化
葡萄糖 燃料电池 金纳米线 多壁碳纳米管
2019/1/22
过油胺（Oleylamine）还原法制备了金纳米线（Au nanowires），将其与酸化处理的多壁碳纳米管（MWCNTs）通过层层组装制备了Au nanowires-MWCNTs复合结构修饰的玻碳电极（Au nanowires-MWCNTs/GCE）.电化学研究结果表明，与单纯Au nanowires或MWCNTs修饰电极相比，Au nanowires-MWCNTs/GCE对葡萄糖表现出更优良的...
Imaging electric charge propagating along microbial nanowires（图）
microbial nanowires electric
2014/12/1
AMHERST, Mass. -– The claim by microbiologist Derek Lovley and colleagues at the University of Massachusetts Amherst that the microbe Geobacter produces tiny electrical wires, called microbial nanowir...
Charged States and Band-Gap Narrowing in Codoped ZnO Nanowires for Enhanced Photoelectrochemical Responses
Charged States Band-Gap Narrowing Codoped ZnO Nanowires Enhanced Photoelectrochemical Responses
2012/2/27
By means of first-principles calculations within the density functional theory, we study the structural and optical properties of codoped ZnO nanowires and compare them with those of the bulk and film...
On the probability of quantum phase slips in superconducting nanowires
quantum phase slips superconducting nanowires
2012/2/27
The paper discusses mechanisms for decay of supercurrents in ultrathin superconducting wires driven by quantum fluctuations. We argue that momentum conservation strongly suppresses probability of such...
本文研究设计一种室内甲醛气体实时监测和处理一体化装置。首先，通过电化学方法刻蚀大面积硅纳米线阵列并通过无电镀技术制备镍/硅纳米线（Ni/SiNWs）和钯-镍/硅纳米线（Pd-Ni/SiNWs）阵列电极，Pd-Ni/SiNWs阵列电极对甲醛有很强电化学催化氧化作用，以其为电化学甲醛传感器工作阳极，以Ni/SiNWs阵列为对电极，Ag/AgCl为参考电极，循环伏安技术测试结果显示该传感器对甲醛浓度灵敏...
Mathematical modeling of magnetostrictive nanowires for sensor application
sensor application magnetostrictive nanowires Materials Science
2011/9/30
Abstract: Magnetostrictive wires of diameter in the nanometer scale have been proposed for application as acoustic sensors [Downey et al., 2008], [Yang et al., 2006]. The sensing mechanism is expected...
Stability of precessing domain walls in ferromagnetic nanowires
Stability of precessing domain walls ferromagnetic nanowires Materials Science
2011/7/28
Abstract: We show that recently reported precessing solution of Landau-Lifshitz-Gilbert equations in ferromagnetic nanowires is stable under small perturbations of initial data, applied field and anis...
Single-crystal silver nanowires: Preparation and Surface-enhanced Raman Scattering (SERS) property
Single-crystal silver nanowires Surface-enhanced Raman Scattering (SERS) property
2011/9/13
Ordered Ag nanowire arrays with high aspect ratio and high density self-supporting Ag nanowire patterns were successfully prepared using potentiostatic electrodeposition within the confined nanochanne...
Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect
Spin precession ballistic cylindrical nanowires
2010/11/24
The spin precession in a cylindrical semiconductor nanowire due to Rashba spin-orbit coupling has been investigated theoretically using an InAs nanowire containing a surface two-dimensional electron g...
Spin-orbit coupling and phase-coherence in InAs nanowires
Spin-orbit coupling phase-coherence InAs nanowires
2010/11/18
We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic
vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conduc...
Effect of quasi-bound states on coherent electron transport in twisted nanowires
quasi-bound states coherent electron transport twisted nanowires
2010/11/8
Quantum transmission spectra of a twisted electron waveguide expose the coupling between traveling and quasi-bound states. Through a direct numerical solution of the open-boundary Schr\"odinger equati...
Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots
Group-III assisted catalyst-free growth InGaAs nanowires quantum dots
2010/11/25
Growth of GaAs and InxGa1xAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the ind...
Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: An atomistic analysis
silicon nanowire mobility p-type holes atomistic bandstructure
2010/11/22
The mobility of p-type nanowires (NWs) of diameters of D=12nm down to D=3nm, in [100], [110], and [111] transport orientations is calculated. An atomistic tightbinding model is used to calculate the N...
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators
Industrially Scalable Process Silicon Nanowires Seebeck Generators
2010/11/25
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators.
First Principles Study of Si/Ge Core-Shell nanowires under external uniaxial strain
First Principles Study Si/Ge Core-Shell nanowires external uniaxial strain
2010/11/11
Density-functional theory based first principles calculations are performed to study the effects of external uniaxial strain on the electronic states of Si/Ge core-shell nanowires along the [110] dire...