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Effect of Ionizing Radiation on the Silicon IMPATT Diode Characteristics
Ionizing Radiation Silicon IMPATT Diode Characteristics
2010/4/15
We investigated the effect of 60Co g-irradiation (doses from 102 to 2 \times 106 Gy), both without and with heat annealing, on silicon IMPATT diode parameters. It is shown that such treatments improve...