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Thermal Expansion Contribution to the Temperature Dependence of Excitonic Transitions in GaAs and AlGaAs
Thermal Expansion the Temperature Dependence Excitonic Transitions GaAs and AlGaAs
2010/10/21
Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary AlxGa1−xAs alloy in the temperature range from 2 to 300 K. The effect of the ...