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为提高垂直腔面发射激光器(VCSEL)的输出功率,对具有3个In0.2Ga0.8As/GaAs0.92P0.08应变量子阱结构,发射波长为977 nm的VCSEL列阵进行了研究。对量子阱结构进行了优化,选择具有更宽带隙的GaAsP作为势垒材料,计算了In0.2Ga0.8As/GaAs0.92P0.08量子阱的带阶。对采用In0.2Ga0.8As/GaAs0.92P0.08和In0.2Ga0.8As...
期刊信息
篇名
1.78μm strained InGaAs-InGaAsP -InP distributed feedback quantum well lasers
语种
英文
撰写或编译
作者
Shurong Wang,Wang hui,Wang baojun,Zhu Hongliang,Zhang jing,Ding ying,Zhao lingjuan,Zhou fan,Wang luf...
Butt-Coupling Loss of 0.1 dB/Interface in InP/InGaAs Multi-Quantum-Well Waveguide-Waveguide Structures grown by Selective Area Chemical Beam Epitaxy
integrated optics butt-coupling SAE CBE
2010/4/16
The lateral coupling of waveguiding structures in both [011] and [0\bar{1}1] directions is studied using embedded selective area epitaxy by Chemical Beam Epitaxy. All growth steps are carried out unde...