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Effect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer
Doped GaAs Self-Consistently The Intersubband Absorption
2013/1/30
We study in this paper the intersubband optical absorption of Si doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solvin...
The Temperature Dependence of the Electronic Structure of Si d-doped GaAs
d-doped GaAs electronic structure temperature-dependence
2010/4/13
We investigated theoretically the change of electronic properties of Si d-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuni...
Single Si d-Doped GaAs Investigations by New Photothermal Wavelength Modulated Photocurrent Technique
Photothermal Wavelength Modulated Photocurrent
2010/4/16
New Photothermal Wavelength Modulated Photocurrent (PWMPC) technique is reported. This technique is used for investigation of the MBE grown p-GaAs sample in which a single Si-layer was embedded with a...