搜索结果: 1-11 共查到“GaAs/AlGaAs”相关记录11条 . 查询时间(0.062 秒)
GaAs/AlGaAs量子阱热红外上转换焦平面材料研究
GaAs/AlGaAs 量子阱 热红外 转换焦 平面材料
2023/8/31
GaAs/AlGaAs量子阱热红外上转换焦平面材料研究。
Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures
Spin orbital mechanisms of the magneto-gyrotropic photogalvanic effects
2010/11/24
We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE)in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Land´e-factor g...
掺杂GaAs/AlGaAs超晶格的激发态向受主中心跃迁的发光
GaAs/AlGaAs超晶格 激发态 受主中心
2009/5/19
掺杂GaAs/AlGaAs超晶格的激发态向受主中心跃迁的发光。
Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers
ohmic contacts sputtering
2011/5/10
This paper reports on the results of optimization of ohmic contacts for GaAs/AlGaAs quantum cascade lasers (QCLs). Technological parameters during optimization concerned surface preparation, evaporat...
Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe
Suppression of nuclear spin GaAs/AlGaAs interface quantum dot nano-probe
2010/4/8
Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spe...
GaAs-AlGaAs双异质结（DH）外延片的位错检测
GaAs-AlGaAs 双异质结 外延片 位错检测
2008/10/24
我们用熔融KOH作位错腐蚀剂,并用位错跟踪腐蚀的方法显示DH外延片的位错,结果表明,可以依照 DH外延片顶层(P~+-GaAs层)的位错腐蚀坑形状,区分出从 n-GaAs延伸上来的位错和由异质结外延引进的位错.
分子束外延GaAs/AlGaAs高速器件与光电子器件材料
分子束外延 高速器件 光电子器件
2008/9/23
分子束外延（MBE）技术是研制超薄层微结构材料的主要技术手段之一。该成果在改进和完善国产MBE设备的同时，研制成功了高质量的GaAs/AlGaAsHEM材料、量子阱激光器材料和SEED材料。已用上述高速器件材料制作出11级和25级HEMT环形振荡器，其门延迟时间达32ps/门（77K）；研制生长的量子阱激光器材料实现了阈值低、波长可调的激光器，材料的阈电流密度已达94/cm^2；研制生长的自电光效...
Designing of GaAs/AlGaAs multiple quantum wells to enhance magnetooptical Kerr effect
magnetooptical Kerr effect (MOKE)
2011/5/4
In this article we study magnetooptical Kerr effect (MOKE) of the GaAs/Al0.31Ga0.69As multiple quantum wells (MQWs). Firstly, comparing the measured spectra of MOKE with the theoretical ones we establ...
Coherence of Elementary Excitations in Disordered GaAs/AlGaAs Superlattices
Coherence Localization Superlattices
2010/9/25
The localization properties of the single-particle and collective electron excitations were investigated in the intentionally disordered GaAs=AlGaAs superlattices by weak field magnetoresistance and R...
Study of the RPA Pair-Correlation Function in GaAs-AlGaAs Parabolic Quantum Well Wires
the RPA Pair-Correlation Function GaAs-AlGaAs Parabolic Quantum Well Wires
2010/10/22
The ground state intrasubband pair-correlation function for a quasi-one-dimensional electron gas confined in a GaAs-AlxGa1¡xAs parabolic quantum well wire within the Random-Phase Approximation (...
Angular dependence and mode distribution of acoustic phonon emission by hot 2D electrons in GaAs/AlGaAs heterojunctions and quantum wells
2D electron gas transverse acoustic
2010/4/16
We report a detailed theoretical study of the angular dependence and mode distribution of the acoustic phonon emission by hot two-dimensional electron gases in GaAs/AlGaAs heterojunctions and quantum ...