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A team of researchers from the University of California, Riverside, Bourns College of Engineering and the Russian Academy of Science has demonstrated a new type of holographic memory device that could...
Hysteresis of Electronic Transport in Graphene Transistors
graphene transistor conductance hysteresis charge transfer capacitive gating water dipole
2010/11/17
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The
gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is sh...
Ab Initio Local Density Approximation Description of the Electronic Properties of Zinc Blende Cadmium Sulfide (zb-CdS)
Electronic Properties Zinc Blende Cadmium Sulfide (zb-CdS)
2010/11/18
Self-consistent ab- initio electronic energy band structure of zinc blende CdS are reported
within the local density functional (LDF) formalism. Our first principle, non-relativistic and
ground stat...
First-principles study of structural, electronic and elastic properties of Nb4AlC3
MAX phases Ab initio Structural properties Electronic properties Elastic properties Pressure effect
2010/6/30
Using First-principles calculations, we have studied the structural, electronic and elastic properties of Nb4AlC3, a new compound belonging to the MAX phases. Geometrical optimization of the unit cell...
Ab Initio Study of Half-Metallic Feature and Electronic Structure of A2FeMoO6 (A=Ba,Ca) Magnetic System
Electronic structure Half metallic Complex Perovskite
2010/9/29
We report several ab initio calculations performed over the A2FeMoO6 (A=Ba, Ca) double perovskite. Results show that it is an insulator for the spin up orientation and conductor for the other one. We ...
Electronic States in n-Type GaAs Delta-Doped Quantum Wells Under Hydrostatic Pressure
GaAs Delta-doping Hydrostatic pressure
2010/9/25
The calculation of the electronic energy levels of n-type d-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account speciall...
Electronic Structure of the n-Type Doped AgInO2 and CuAlO2 Delafossites: Similarities and Differences
Electronic Structure the n-Type Doped AgInO2 and CuAlO2 Delafossites Similarities and Differences
2010/10/21
We performed the first-principles band-structure calculations for a pure and a Cd-doped AgInO2 delafossite compound. The results are carefully analyzed and compared with the results obtained for a pur...
CH3CN on Si(001): Adsorption Geometries and Electronic Structure
CH3CN Adsorption Geometries Electronic Structure
2010/10/22
In this work we employ the state of the art pseudopotential method, within a generalized gradient approximation to the density functional theory, to investigate the adsorption process of acetonitrile ...
Electronic Properties of Isolated Nickel in Diamond
Electronic Properties Isolated Nickel Diamond
2010/10/22
Isolated nickel impurities in diamond have been investigated using the spin-polarized full-potential linearized augmented plane wave total energy method. The electronic and atomic structures, symmetri...
The Electronic Behavior of Poly(3-octylthiophene) Electrochemically Synthesized onto Au Substrate
The Electronic Behavior Poly(3-octylthiophene) Au Substrate
2010/10/28
We investigate the electronic characteristics and the absorption spectra of poly(3-octylthiophene), POT, films grown by electrochemical methods onto Au substrates. We discuss the results considering t...