搜索结果: 136-145 共查到“知识库 半导体物理学”相关记录145条 . 查询时间(0.393 秒)
Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si
Metal-oxide-semiconductor quasi-static
2010/4/15
Metal-oxide-semiconductor (MOS) capacitors fabricated on Ge-implanted Si have been investigated by using C-V and G-V measurements. The control sample on pure Si substrate yielded normal C-V and G-V ch...
Wigner Crystalization in Semiconductor Quantum Wires
Semiconductor Quantum Wires quasi-one-dimensional structures
2010/4/16
We study the Wigner crystallization in semiconductor quantum wires within the density functional approach. As the density of electrons in quasi-one-dimensional structures is lowered, we find that the ...
Electrons in Large-Bandgap Bulk Semiconductors and Quantum Wells
Electrons Quantum Wells Large-Bandgap Bulk Semiconductors
2010/4/16
The analytical theory of hot electrons interacting with lattice vibrations, impurities, and interface roughness in quantum wells is developed. We have obtained new distribution functions which describ...
The general features of large-bandgap semiconductors that make them interesting for electronic and optoelectronic applications are briefly reviewed. The nitrides AIN, GaN and InN are singled out for a...
Electrons and Phonons in GaN Semiconductor Quantum Well Devices
Electrons Phonons GaN Semiconductor Quantum Well Devices
2010/4/16
Electrons and polar optical phonons and their interactions are considered in the context of semiconductor quantum well devices, with particular reference to real quantum well laser structures. Distinc...
Highlights of the interaction between fundamental research and semiconductor device technology are summarized.
Deformation Methods for Investigation of the Deep Level Parameters in Semiconductors
uniform pulse hydrostatic compression Deep Level Parameters Semiconductors
2010/4/19
In this paper deformation methods are offered to investigate deep level parameters in semiconductors. It is based on strain parameters measurements of compensated and overcompensated semiconductors. T...
Eect of Sintering Time On Sb Added BiPbSrCaCuO Superconducting Ceramics
Sb Added BiPbSrCaCuO Superconducting Ceramics
2010/4/19
In this study, superconducting Sb doped BiPbSrCaCuO ceramics with a fixed nominal composition were prepared and sintered at 850oC for different periods. The structural phases of the sintered ceramics ...
Doping Effects of Ga And Te On The Kinetic Coefficients of Rhombohedral And Cubic Phases Of Ge1-x Gax Te Solid Solution Alloys
Doping Effects Ga Te Ge1-x Gax Te Solid Solution Alloys
2010/4/16
this study Ga and Te doping effects on the kinetic parameters (thermo e.m.f., electrical conductivity, heat conductivity, Hall and Nernst-Ettingshausen coefficients) of the rhombohedral and cubic phas...