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10Gbit/s transmission over 2.5GHz bandwidth by direct modulation of commercial VCSEL and multi-mode FP lasers using Adaptively Modulated Optical OFDM modulation for Passive Optical Network
transmission bandwidth direct modulation multi-mode FP lasers Adaptively Modulated Optical OFDM modulation Passive Optical Network
2015/8/3
We experimentally demonstrate 10Gbit/s transmission over 2.5GHz bandwidth by direct modulation of commercial VCSEL and FP lasers using AMOOFDM modulation. A comparison between the two transmitters is ...
第三届超强激光科学和应用国际会议（International Conference on Ultrahigh Intensity Lasers Development, Science and Emerging Applications）
第三届 超强激光科学 国际会议
2008/5/31
It is our great pleasure to inform you that the 3rd International Conference on Ultrahigh Intensity Lasers: Development, Science and Emerging Applications (ICUIL'08) will be hold during October ...
期刊信息
篇名
Raman Spectra with Excitation of Various Wavelength lasers on Silicon Nanowires
语种
英文
撰写或编译
作者
B.B.Li, D.P.Yu, S.L.Zhang
第一作者单位
刊物名称
physical Review.B
页面
1999,VOl.59,1645
出版日期
1999年
月
日
文章标识(I...
期刊信息
篇名
Local molecular vibration induced by lasers
语种
英文
撰写或编译
作者
黄青，詹明生等
第一作者单位
刊物名称
Phys Lett A
页面
1995.205.2
出版日期
1995年
月
日
文章标识(ISSN)
相关项目
固体中无粒子数反转激光的探索
期刊信息
篇名
Localiged molecular vibration induced by coherent lasers
语种
英文
撰写或编译
作者
詹明生，黄青等
第一作者单位
刊物名称
Chinese Science Bulletin
页面
1995.40(8):647
出版日期
1995年
月
日
文章标识(ISSN)
相关项目
固体中无粒子数反转激光的探索
期刊信息
篇名
Relaxed alignment tolerance of monolithic ring lasers
语种
英文
撰写或编译
撰写
作者
Er Jun Zang,Jianping Cao,Mingchen Zhong
第一作者单位
中国计量科学研究院
刊物名称
J, Appl. Opt., 41, n.33, pp.7012-17, (2002)
页面
出版日期
2002年
...
期刊信息
篇名
Theoretical analysis of multi-transverse mode characteristics of vertical-cavity surface-emitting lasers
语种
英文
撰写或编译
作者
Xiaofeng Li,Wei Pan,Bin Luo,Ma Dong,Zhao Zheng,Deng Guo
第一作者单位
刊物名称
Semi...
Optical characterisation of vertical-external-cavity surface-emitting lasers (VECSELs)
vertical-external-cavity surface-emitting laser (VECSEL)
2011/5/4
The purpose of this paper is to outline the principles of optical characterisation of the new kind of semiconductor devices: vertical-external-cavity surface-emitting lasers (VECSELs). Realisation of ...
High power (>1 W) room-temperature (300 K) 980 nm continuous-wave AlGaAs/InGaAs/GaAs semiconductor lasers
high power semiconductor laser
2011/5/4
A technology of high power, continuous-wave (CW) semiconductor lasers has been elaborated. AlGaAs/InGaAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE), were used to fabricate laser diod...
EPSRC grant enables research into using lasers for new medical, industrial and security applications
laser beam ionizing radiation
2007/3/20
15 March 2007，Shine a powerful laser beam on a small piece of metal, plastic, or a liquid and a burst of intense high-energy ionizing radiation is emitted. Thanks to a grant of £5m from the EPSR...
Application of spatially resolved thermoreflectance for the study of facet heating in high power semiconductor lasers
thermoreflectance
2011/5/3
We have developed a new technique for monitoring the facet heating in semiconductor lasers and for correlating these measurements with the performance and reliability of the device. The method is base...
Analysis of thermal conditions of pulse operated single quantum well separate confinement heterostructure (SQW SCH) lasers
junction temperature dynamics laser
2011/4/27
Junction temperature affects laser diode performance in many ways. Magnitude of the light output power, a center wavelength of the spectrum and diode reliability are all strongly dependent on the junc...
Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers
photonic crystals vertical-cavity surface-emitting diode lasers (VCSELs) photonic-crystal-confined VCSELs simplified VCSEL modelling
2011/4/27
In standard GaAs-based oxide-confined vertical-cavity surface-emitting diode lasers (VCSELs), their transverse single-fundamental-mode operation is limited to relatively low outputs. It is a direct co...
Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band
InGaAs quantum-well lasers, molecular beam epitaxy, optical pyrometry
2011/4/27
The paper deals with selected problems of molecular beam epitaxy (MBE) technology of fabrication of 980-nm strained InGaAs quantum-well (QW) lasers. Special attention has been paid to the growth of ac...
Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3-μm wavelength range
semiconductor laser VCSEL GaInAs/GaAs QW
2011/4/26
Comprehensive three-dimensional self-consistent optical-electrical-thermal-gain physical modelling is used to simulate room-temperature continuous-wave performance characteristics of GaInAs/GaAs laser...