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离子镀TiN涂层的高温氧化特性
TiN膜 氧化 离子镀
2010/3/25
研究了离子镀TiN涂层在500～700 ℃间的高温氧化特性，并利用SEM观察和XRD相分析研究了氧化产物的类型及膜失效机制。结果表明，TiN膜的氧化遵循抛物线扩散规律，其氧化产物为金红石型TiO2。与M2和3Cr2W8V相比，TiN膜具有优良的抗氧化性能。以M2为基体的TiN涂层抗氧化性能略高于以3Cr2W8V为基体的TiN涂层。
微波碳热还原法制备TiN
ＴｉＮ 微波加热 碳热还原
2010/4/6
本文探讨了利用微波加热技术碳热还原ＴｉＯ_２合成ＴｉＮ工艺的可行性及其机理，并对碳热还原反应热力学进行了分析．实验结果表明，微波碳热还原法合成ＴｉＮ具有其独特性和优越性．与常规法相比，它不仅能降低合成温度，缩短合成周期，还能细化晶粒，提高粉料活性．
Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...
Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide
Thermal Treatment Oxygen Pressures Tin-Doped Indium Oxide
2010/12/16
The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy...