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Study Finds Surface Texture of Gallium Nitride Affects Cell Behavior
Surface Texture Gallium Nitride Cell
2016/11/4
This work compares the behavior of PC12 cells on planar and patterned III-nitride materials with nanostructured topographies. Three different materials’ compositions containing N-polar and Ga-polar ar...
Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy
Vertical Alignment Ultrathin Gallium Phosphide Nanowire Arrays Silicon Chemical Beam Epitaxy
2016/12/2
CBE and CVD were performed in an ultra-high vacuum (UHV) system. The background pressure was kept at 1 × 10-10 mbar. The Au was deposited by MBE on a hydrogen terminated Si substrate with a surface te...
Synthesis and thermal stability of hydrotalcites based upon gallium
Hydrotalcite Hydrocalumite Gallium Synthesis Thermal stability
2011/11/10
Hydrotalcites based upon gallium as a replacement for aluminium in hydrotalcite over a Mg/Al ratio of 2:1 to 4:1 were synthesised. The d(003) spacing varied from 7.83 ?for the 2:1 hydrotalcite to 8.15...
专著信息
书名
Undoped Gallium Antimonide Studied by Positron Annihilation Spectroscopy
语种
英文
撰写或编译
作者
S.K. Ma,C.C. Ling,H.M. Weng,and D.S. Hang
第一作者单位
出版社
Mat. Res. Soc. Symp. Proc. 799, Z5.30.1 (2004)
出版地
...
专著信息
书名
Electron-irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence
语种
英文
撰写或编译
作者
Ma,S K,Lui,M K,Ling,C C,Fung...
Hydrogen Influence on Gallium Arsenide Thin Films Prepared by RF-Magnetron Sputtering Technique
Hydrogen Gallium arsenide RF-magnetron sputtering
2010/9/29
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the ...
Simulation of Millimeter-Wave Gunn Oscillations in Gallium Nitride
High field transport Millimeter-Wave Gunn Oscillations
2010/4/12
High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to mill...
Gallium and Chromium Substitution for Aluminum in Synthesized Beidellite
Beidellite Synthesis Chromium Gallium Isomorphous Substitution
2011/12/8
Abstract: The hydrothermal synthesis of Mg-beidellite in which limited amounts of Ga and Cr are clearly shown to be incorporated into nonexchangeable positions in the clay layer framework is reported ...