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Physicists Decipher Electronic Properties of Materials in Work That May Change Transistors
Physicists Electronic Properties Materials Change Transistors
2016/12/13
UT Dallas physicists have published new findings examining the electrical properties of materials that could be harnessed for next-generation transistors and electronics.Dr. Fan Zhang, assistant profe...
Penn Engineers Develop First Transistors Made Entirely of Nanocrystal ‘Inks’
Penn Engineers Transistors Nanocrystal Inks
2016/4/13
The transistor is the most fundamental building block of electronics, used to build circuits capable of amplifying electrical signals or switching them between the 0s and 1s at the heart of digital co...
Incoherent dynamics of vibrating single-molecule transistors
Nanometer quantum island single electron transistor model dynamics
2014/12/20
We study the tunneling conductance of nanoscale quantum “shuttles” in connection with a recent experiment [H. Park et al., Nature 407, 57 (2000)] in which a vibrating C60 molecule was apparently funct...
ANN ARBOR—An odd, iridescent material that's puzzled physicists for decades turns out to be an exotic state of matter that could open a new path to quantum computers and other next-generation electron...
Organic thin-film transistors with reduced photosensitivity
Organic Photosensitivity Nanoparticle Dielectrics Thin-film transistors
2011/11/24
Organic thin-film transistors with a minimal threshold voltage shift and a more stable photocurrent under illuminated conditions can be made by embedding titanium dioxide (TiO2) nanoparticles into a p...
Hysteresis of Electronic Transport in Graphene Transistors
graphene transistor conductance hysteresis charge transfer capacitive gating water dipole
2010/11/17
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The
gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is sh...
Imaging Dissipative Transport in Carbon Nanotube Network Transistors
Imaging Dissipative Transport Carbon Nanotube Network Transistors
2010/11/24
We use infrared thermometry of carbon nanotube network (CNN) transistors and find the forma-tion of distinct hot spots during operation. However, the average CNN temperature at breakdown is significan...
On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors
obtaining MOSFET-like performance sub-60 mV/decade
2010/11/25
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far h...
Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance
InAs Vertical Lateral Band-to-Band Tunneling Transistors
2010/11/23
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap...
Transport Properties and Optical Conductivity of the adiabatic Su-Schrieffer-Heeger model: a showcase study for rubrene based field effect transistors
Transport Properties Optical Conductivity of the adiabatic Su-Schrieffer-Heeger model
2010/11/25
Transport properties, spectral function and optical conductivity of the adiabatic one-dimensional Su-Schrieffer-Heeger (SSH) model are studied with particular emphasis on the model parameters suitable...
Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
Room Temperature Coherent Voltage Tunable Terahertz Emission
2010/11/24
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage...
Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field
Coulomb Oscillations Indium-doped ZnO Nanowire Transistors Magnetic Field
2010/11/9
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to ...
Effect of Carrier Concentration Dependant Mobility on the Performance of High Electron Mobility Transistors
High Electron Mobility Transistor diffusion part drain current
2010/4/15
The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes in...
Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers
SOI pseudo-MOS transistor total dose radiation ion implantation
2009/9/17
The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presen...
Total dose radiation effects on SOI NMOS transistors with different layouts
SIMOX SOI total dose radiation effect MOS transistors
2009/8/13
Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX)...