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Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films
PECVD Nitride films C-V G-V I-V P M A hysteresis and memory window
2010/4/9
A memory capacitor formed from Al/Si3N4/Si was prepared by means of trapping and de trapping mechanism of the dielectric films. Charge trapping and interface state characteristics of silicon nitride (...