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Energy Relaxation Rate of Hot Electrons in N-Type GaN Epilayers using Heat Pulse Techniques
Energy Relaxation Rate N-Type GaN Epilayers Hot Electrons
2010/4/16
We have measured the energy relaxation rate of hot electrons in MBE grown bulk GaN epilayers on GaAs and sapphire substrates over the electron temperature range 1 - 130 K. The measurements were made u...