搜索结果: 1-8 共查到“凝聚态物理学 Transistors”相关记录8条 . 查询时间(0.062 秒)
Physicists Decipher Electronic Properties of Materials in Work That May Change Transistors
Physicists Electronic Properties Materials Change Transistors
2016/12/13
UT Dallas physicists have published new findings examining the electrical properties of materials that could be harnessed for next-generation transistors and electronics.Dr. Fan Zhang, assistant profe...
Penn Engineers Develop First Transistors Made Entirely of Nanocrystal ‘Inks’
Penn Engineers Transistors Nanocrystal Inks
2016/4/13
The transistor is the most fundamental building block of electronics, used to build circuits capable of amplifying electrical signals or switching them between the 0s and 1s at the heart of digital co...
Organic thin-film transistors with reduced photosensitivity
Organic Photosensitivity Nanoparticle Dielectrics Thin-film transistors
2011/11/24
Organic thin-film transistors with a minimal threshold voltage shift and a more stable photocurrent under illuminated conditions can be made by embedding titanium dioxide (TiO2) nanoparticles into a p...
Imaging Dissipative Transport in Carbon Nanotube Network Transistors
Imaging Dissipative Transport Carbon Nanotube Network Transistors
2010/11/24
We use infrared thermometry of carbon nanotube network (CNN) transistors and find the forma-tion of distinct hot spots during operation. However, the average CNN temperature at breakdown is significan...
On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors
obtaining MOSFET-like performance sub-60 mV/decade
2010/11/25
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far h...
Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance
InAs Vertical Lateral Band-to-Band Tunneling Transistors
2010/11/23
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap...
Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
Room Temperature Coherent Voltage Tunable Terahertz Emission
2010/11/24
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage...
Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors
Ballistic transport frequency response Steady-state Drain current
2010/7/5
A Monte Carlo simulation has been used to model steady-state electron transport in SiC and GaN field effect transistor. The simulated device geometries and doping are matched to the nominal parameters...