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Ab-initio calculations for the beta-tin diamond transition in Silicon: comparing theories with experiments
Ab-initio calculations for the beta-tin diamond transition Silicon:
2010/11/19
We investigate the pressure-induced metal-insulator transition from diamond to β-tin in bulk Silicon,using quantum Monte Carlo (QMC) and density functional theory (DFT) approaches. We show
that it is...
Engineering chromium related single photon emitters in single crystal diamond
Engineering chromium single photon emitters single crystal diamond
2010/10/27
Color centers in diamond as single photon emitters, are leading candidates for future
quantum devices due to their room temperature operation and photostability. The recently
discovered chromium rel...
期刊信息
篇名
Superconductivity in Simple elemental Solids—a computational study of boron-doped diamond and high pressure phases of Li and Si
语种
英文
撰写或编译
撰写
作者
John S. Tse,马琰铭,等人
第一作者单位
Department of Physic...
Pseudopotential-Based Full Zone k . p Technique for Indirect Bandgap Semiconductors: Si, Ge, Diamond and SiC
Band structure indirect bandgap semiconductors pseudopotentials
2010/4/9
The k . p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands ...