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Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures
Identification of the major endemically poor mobilities
2010/11/22
Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at s...
磁控溅射DLC/SiC/Ti多层膜对镁合金摩擦磨损性能的影响
镁基材 薄膜 摩擦磨损 磁控溅射
2013/10/8
采用室温磁控溅射技术在镁合金(AZ91D)表面制备DLC/SiC/Ti(类金刚石/碳化硅/钛)多层膜(SiC,Ti为中间层),研究了薄膜的纳米压痕行为和膜基系统的摩擦磨损性能。试验结果表明:DLC薄膜具有低的纳米硬度(4.01GPa)和低的弹性模量(40.53GPa),但具有高的硬弹比(0.10);膜基系统具有好的摩擦磨损性能;在以氮化硅球为对磨件的室温干摩擦条件下摩擦系数平均约为0.19,与镁合...