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Silicon Photo-Multiplier radiation hardness tests with a beam controlled neutron source
Silicon Photo-Multiplier beam controlled neutron source
2010/3/16
We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a si...
Characterization of the Main Frequency Shifts for the Brazilian 133Cs Atomic Beam Frequency Standard
the Main Frequency Shifts the Brazilian 133Cs Atomic Beam Frequency Standard
2010/10/15
In order to evaluate an atomic clock, it is important to determine the main frequency shifts caused by external fields, device imperfections, etc. Scanning the frequency of the main oscillator, the Ra...
Behavior of Linear Beam-Plasma Instabilities in the Presence of Finite Amplitude Circularly Polarized Waves
Linear Beam-Plasma Instabilities Finite Amplitude Circularly Polarized Waves
2010/10/27
We review the effect of finite amplitude circularly polarized waves on the behavior of linear ion-beam plasma instabilities. It has been shown that left-hand polarized waves can stabilize linear right...
Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy
GaAs/GaInP Quantum Wells Chemical Beam Epitaxy
2010/10/21
In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), phot...
Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates
Electrical Properties Bi-Doped PbTe Layers Molecular Beam Epitaxy BaF2 Substrates
2010/10/22
Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layers grown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying fr...
Characterization of PbTe p-n+ Junction Grown by Molecular Beam Epitaxy
PbTe p-n+ Junction Molecular Beam Epitaxy
2010/10/22
In this work we investigate the electrical properties of PbTe p ¡ n+ junction. Mesa diodes were fabricated from p ¡ n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy....