搜索结果: 1-15 共查到“工学 Tunneling”相关记录15条 . 查询时间(0.056 秒)
Modern computers contain tens of billions of switches, called transistors, that pass electrical signals to process inputs and outputs—serving as the basis for computation.
Zooming and Tunneling in Tioga: Supporting Navigation in Multidimensional Space
Zooming Tunneling Tioga Supporting Navigation Multidimensional Space
2016/5/24
In [7] we proposed a visual programming system called Tioga. The Tioga system applies a boxes and arrows programming notation to allow nonexpert users to graphically construct database applications. U...
Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction
Coexistance giant tunneling electroresistance magnetoresistance all-oxide magnetic tunnel junction
2012/2/24
We demonstrate with first-principles electron transport calculations that large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist in an all-oxide device. The ...
Project of a trenchless works tunneling machines ordered construction family
Engineering design Constructional design Series of types
2009/12/14
Purpose: The water and electricity (etc.) supply is the main problem that big agglomerations meet, therefore the non-excavation works are developed in areas of high buildings density.
Design/methodol...
Tunneling magnetoresistance from a symmetry filtering effect
tunneling magnetoresistance TMR evanescent state symmetry filter complex energy band delta-1 state interfacial resonance states magnetic tunnel junction
2010/10/13
This paper provides a brief overview of the young, but rapidly growing field of spintronics.
Its primary objective is to explain how as electrons tunnel through simple insulators such as
MgO, wavefu...
Active nanocharacterization of nanofunctional materials by scanning tunneling microscopy
nanotechnology nanocharacterization scanning tunneling microscopy scanning probe microscopy nanomaterials nanofabrication
2010/10/13
Recent developments in the application of scanning tunneling microscopy (STM) to
nanofabrication and nanocharacterization are reviewed. The main focus of this paper is to
outline techniques for depo...
会议信息
篇名
A new thinking of reducing powder & dust on mining & tunneling faces
语种
英文
撰写或编译
撰写
作者
Li Xiaohuo
第一作者单位
会议名称
'98 International Symposiom on Safety Science and Technology
发表日期
1998年
月
日
文章标识(I...
Displacement sensing using evanescent tunneling between guided resonances in photonic crystal slabs
Displacement sensing evanescent tunneling between guided resonances photonic crystal slabs
2015/8/11
Using both analytic theory and first-principles finite-difference time-domain simulations, we introduce a displacement sensing mechanism using photonic crystal slabs coupled in the near-&#...
We investigate general channel drop tunneling processes using both analytic theory and first-principles simulations. These tunneling processes occur when two one-dimensional continuums are broug...
On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates
Sensitivity tunneling current n-channel MOSFET
2010/12/9
A theoretical model to evaluate the sensitivity of the tunneling current to the electric field in an n-channel MOSFET with two gates is proposed. This sensitivity is calculated in a real situation.
We present a general analysis of the tunneling process through localized resonant states between onedimensional continuums. We show that complete transfer can occur between the continuums by creating ...
Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers
Loss power density tunneling current MOS cell oxide thickness
2010/12/10
The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related...
A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller
Tunneling current EEPROM oxide thickness
2010/12/10
The tunneling current density in a MOS cell for a low-voltage microcontroller based on EEPROM is calculated for high electric strengths. Furthermore, this current density is discussed in terms of the ...
Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films
the Tunneling and Hopping Parameters RuO2 Thick Films
2010/12/23
Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina [(Al2O3)·96(MgO)·04] substrates. The temperature coefficient of res...
Electron Tunneling and Hopping Possibilites in RuO2 Thick Films
Electron Tunneling and Hopping Possibilites RuO2 Thick Films TCR
2010/12/23
It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling, and (iii)...