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Cornell engineers and materials scientists have added a state-of-the-art tool to their suite of laboratory equipment that has helped make the university a world leader in the study of gallium oxide, a...
Application of interference methods for determination of curvature radius in metal–oxide–semiconductor (MOS) structures
Si–SiO2 system interferometry radius of curvature stress
2011/4/27
The paper deals with the measurement of the radius of curvature of silicon wafer surface. The aim of these measurements was to determine stresses generated during oxidation of silicon wafers. A greate...
Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics
Hot-carrier-injection Stress time Drain current Transconductance MOSFET
2010/12/8
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects gener...