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重离子径迹模板中组装半导体CdS一维纳米材料
硫化镉 纳米线 纳米管 电化学沉积
2008/9/18
用重离子辐照的聚碳酸酯为模板，采用电化学沉积法制备了半导体CdS纳米线和纳米管。通过选用不同蚀刻时间的模板，得到了直径20～100nm、长度20～30μm范围、粗细均匀且具有纤维锌矿结构的CdS纳米线与纳米管。利用扫描电子显微镜(SEM)、X射线衍射(XRD)和透射电子显微镜(TEM)对CdS纳米线与管的形貌和晶体结构特征进行了表征。
Transient Phenomena in Sputtered CdS Photocells
Transient Phenomena Sputtered CdS Photocells
2011/1/10
We describe experimental data and theoretical studies of response time measurements in sandwich structures Al—CdS—Au. The speed of response is about 2 μs in a large sensitivity range. A theoretical si...
Transient Phenomena in Sputtered CdS Photocells
Transient Phenomena Sputtered CdS Photocells
2011/1/21
We describe experimental data and theoretical studies of response time measurements in sandwich structures Al—CdS—Au. The speed of response is about 2 μs in a large sensitivity range. A theoretical si...