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Analysis on SOI(Silicon-on-Insulator)-based MMICs(Multimode Interference Couplers) with different thickness of upper Silicon layer
SOI MMICs thickness Silicon layer MMI
2010/7/16
It is compared with each other that MMIs made of SOI wafers with different thickness of upper Si layer have different properties. MMI coupler made of SOI wafers with thinner Si layer has better self-i...
Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
Negative differential resistance (NDR) Liquid phase chemical-enhanced oxide (LPECO)
2010/12/7
First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with ...
GaN Metal-insulator-semiconductor Field Effect Transistor Based on GaN/AlGaN/GaN Double Heterojunctions
GaN Metal-insulator-semiconductor Field EffectTransistorBased GaN/AlGaN/GaN Heterojunctions
2010/7/15
III-N is the most promising material for high-temperature, high-power electronic devices.
There have been many researches on GaN-based metal semiconductor FET (MESFETs). For many
applications, metal...