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Statistical Model of Hot-Carrier Degradation and Lifetime Prediction for P-MOS Transistors
Hot-carrier P-MOS transistor lifetime prediction
2009/7/28
Along with advances in microelectronics, and computer and space technologies, device dimensions are becoming smaller; as a result, hot-carrier effect, lifetime prediction, and reliability become more ...
Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures
Carrier mobility Delta doping Hot carriers Quantum wells
2010/2/2
Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communica...
Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2010/12/7
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...
Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing
n-MOSFET Defects Stress Hot-carrier Aging
2010/12/8
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spati...
Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors
Stress relaxation diode parameters
2010/12/9
A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of...
Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors
Hot-carrier degradation MOSFET gate geometry
2010/12/9
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of ...