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GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy
Negative differential resistance Avalanche multiplication
2010/12/8
A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetr...
Molecular Beam Epitaxy of HgCdTe for IR FPAs Detectors
Molecular Beam Epitaxy HgCdTe IR FPAs Detectors
2010/7/15
The recent progress in MBE growth of HgCdTe at the Epitaxy Research Center for Advanced Materials, and the National Laboratory for Infrared Physics is reported. It is found that the excellent composit...
N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy
N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Molecular Beam Epitaxy
2010/12/10
N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs double het...