搜索结果: 1-6 共查到“电子技术其他学科 n-GaAs”相关记录6条 . 查询时间(0.157 秒)
在p+GaAs体单晶材料上进行的NEA活化实验
NEA GaAs活化 表面清洁 表面温度控制
2009/11/17
NEA活化实验是利用体单晶材料进行的,未经任何外延或真空解理手续。为确立活化工艺,特别是表面清洁处理规范,作了相应AES分析。借助于测量样品附近高纯Al的熔点以校准及控制样品表面的温度。在不太好的本底真空(2×10-7—6×10-7Pa)条件下,活化好的GaAs样品之白光光电灵敏度可达1000μA/lm以上。
Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics
Effect of Annealing n-GaAs Electrode Photoelectrochemical Characteristics
2010/12/7
The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by a...
Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
Metamorphic buffer layer LP-MOCVD HEMT
2010/12/7
In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented ...
Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
Negative differential resistance (NDR) Liquid phase chemical-enhanced oxide (LPECO)
2010/12/7
First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with ...
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Band-edge positions Polysiloxane Metalloporphyrin Modification n-GaAs Photoelectrochemistry
2010/12/7
Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n...
A Brief Discussion on Energy Considerations for GaAs Parabolic Quantum Dots
Hamiltonian operator GaAs parabolic quantum dot Plasma
2010/12/8
The hamiltonian operator corresponding to a GaAs parabolic quantum dot is formulated by analyzing carefully the terms of this operator. In this formulation, certain plasma aspects are discussed with r...