搜索结果: 1-15 共查到“知识库 理学 SiC”相关记录50条 . 查询时间(0.057 秒)
石墨烯过渡层对金属/SiC接触肖特基势垒调控的第一性原理研究
SiC 石墨烯 肖特基势垒 第一性原理计算
2022/3/31
4H-SiC探测器的快中子产额测量可行性研究
4H-SiC 快中子产额测量 注量响应
2022/3/22
A high-resolution line survey of IRC +10216 with Herschel/HIFI *,** First results: Detection of warm silicon dicarbide (SiC)
carbon-rich evolved star IRC+10216
2014/12/20
We present the first results of a high-spectral-resolution survey of the carbon-rich evolved star IRC+10216 that was carried out with the HIFI spectrometer onboard Herschel. This survey covers all HIF...
1.5m量级SiC陶瓷素坯凝胶注模成型工艺
凝胶注模 碳化硅(SiC) 陶瓷素坯
2014/3/6
利用凝胶注模成型工艺制备了1.5 m量级轻型碳化硅(SiC)陶瓷素坯。研究了颗粒级配、固相含量、混料时间对碳化硅浆料性能的影响。测试了SiC脱脂素坯的显微结构、力学性能和最终烧结体的机械性能和热学性能。结果表明:在最佳分散条件下,通过合理的颗粒级配,成功制备得到了固相含量高达65%,流动性良好的SiC陶瓷浆料。另外,随着固相含量的增加,SiC陶瓷浆料黏度急剧增大;随着混料时间的延长,浆料黏度出现先...
极紫外Mg/SiC、Mg/Co多层膜的稳定性
极紫外多层膜 多层膜反射镜 稳定性 湿度
2014/3/11
采用磁控溅射法在Si(100)基底上镀制了膜系结构分别为[Mg/Co]20、[Mg/SiC]20的两组多层膜,以研究Mg基多层膜的稳定性。对放置在室温和80%相对湿度环境下的样品进行显微镜、表面粗糙度和X射线掠入射反射率测试,对比研究了Mg/Co和Mg/SiC两种多层膜结构在相同环境中的损坏状况。对比结果显示:放置4天后,Mg/SiC损坏面积为26.34%,表面粗糙度为10 nm;Mg/Co的损坏...
Precoder Design for Multi-antenna Partial Decode-and-Forward (PDF) Cooperative Systems with Statistical CSIT and MMSE-SIC Receivers
Precoder Design Multi-antenna Partial Decode-and-Forward Cooperative Systems Statistical CSIT MMSE-SIC Receivers
2012/2/29
Cooperative communication is an important technology in next generation wireless networks. Aside from conventional amplify-and-forward (AF) and decode-and-forward (DF) protocols, the partial decode-an...
The Effect of Laser Processed Nano-SiC-Ni Metal Ceramic on the Surface Properties of the Iron-Based Material
Appraisal System Grey Relation Evaluation Theory Laser Alloying Metal-Ceramic Silicon Carbide (SiC)
2011/11/22
In this article, we have carried out the Ni based self fluxing alloy powder and studied the effect on the laser alloying of 45steel layer which contains different weight percentage of nano-SiC powders...
Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
Comparison of Graphene Formation Si-face SiC {0001} Surfaces
2010/11/19
The morphology of graphene formed on the ( 0001 ) surface (the C-face) and the (0001) surface
(the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is studied by atomic ...
Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures
Identification of the major endemically poor mobilities
2010/11/22
Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at s...
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...
本文阐述了一种4H-SiC肖特基结式Alpha效应微型核电池。利用Schottky结取代常用的p-n结,在活度为0.025mCi/cm2的241Am源辐照下进行测试,得到了开路电压VOC为0.25V、短路电流密度JSC为7.64nA/cm2和输出功率密度Pmax为1.12nW/cm2。在对4H-SiC肖特基结研制过程中的一些关键工艺进行研究之后,采用XRD法对欧姆接触成分进行了分析,结果表明形成了...
连续SiC(Al)纤维的耐超高温性能及其机理
耐超高温 连续SiC(Al)纤维 性能 机理
2010/1/5
以有机金属聚合物聚铝碳硅烷为原料, 利用先驱体转化法制备出连续SiC(Al)纤维. 采用一系列分析测试对纤维的组成、结构以及耐超高温性能进行了表征, 通过与Nicalon纤维的比较, 对连续SiC(Al)纤维的耐超高温机理进行了研究. 结果表明, 连续SiC(Al)纤维具有优异的耐超高温性能,在1800 ℃氩气中处理1 h后, 纤维的强度保留率为80%左右; 元素分析和27Al MAS核磁共振等分...
利用固源分子束外延(SSMBE)生长技术, 在Si(111)衬底上预沉积不同厚度(0、0.2、1 nm)Ge, 在衬底温度900 ℃, 生长SiC单晶薄膜. 利用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品进行了研究. 结果表明, 预沉积少量Ge(0.2 nm)的样品, SiC薄膜表面没有孔洞存在, AFM显示表面比较平整, ...
三维编织C/SiC纤维复合块材的XPS研究
C/SiC复合材料 X射线光电子能谱(XPS) 小面积XPS 成象XPS
2009/12/9
用常规XPS、小面积XPS和成象XPS研究了三维编织的C/SiC纤维复合材料.结果表明,在燃气中灼烧后材料表面生成的暗红色反应是由于层中的SiC已氧化成氧化硅,同时反应层中还引入了杂质Fe、Na、Ca和Al;在反应层下Si以元素Si、SiC和氧化硅多种形式存在.块材横截面的多点小面积XPS分析结果表明,元素硅的相对浓度随深度增加而减少, SiC的相对浓度则随深度增加而增加.块材横截面的成象XPS分...