搜索结果: 1-15 共查到“物理学 TIN”相关记录26条 . 查询时间(0.078 秒)
CERN and the US Accelerator Upgrade Project (AUP, a consortium of various US institutions including Fermilab, BNL and LBNL laboratories based at Fermilab) are working in tandem to develop, build and t...
HiLumi News: 7.2-m-long niobium–tin quadrupole magnet manufactured at CERN reaches nominal current for the first time（图）
欧洲核子研究中心 铌锡四极杆磁铁 标称电流
2023/5/26
Another success for the HL-LHC magnet programme: after the successful endurance test of a 4.2-metre-long niobium–tin quadrupole magnet in the United States in spring 2022, the HL-LHC quadrupole’s long...
HL-LHC magnet endurance test further confirms niobium–tin’s resilience（图）
HL-大型强子对撞机 耐久性测试 铌锡磁铁 弹性
2023/5/26
Future accelerator projects, including the high-luminosity upgrade of the Large Hadron Collider, will rely on niobium–tin (Nb3Sn) alloys for their superconducting components, such as electromagnets. T...
Gray tin exhibits novel topological electronic properties in 3D
Gray tin novel topological electronic properties 3D
2017/4/27
In a surprising new discovery, alpha-tin, commonly called gray tin, exhibits a novel electronic phase when its crystal structure is strained, putting it in a rare new class of 3D materials called topo...
ANALYSIS OF TIN-STRUCTURE PARAMETER SPACES IN AIRBORNE LASER SCANNER DATA FOR 3-D BUILDING MODEL GENERATION
LIDAR Triangulation Cluster Analysis
2015/6/1
The derived building models were evaluated for their correctness and geometric accuracy. Well-defined building roof planes can be
extracted and reconstructed successfully, while disturbances such as...
为了研究Ti-Si-N薄膜生长过程中界面的形成,采用第一性原理计算了在TiN(001)表面上3N1Ti1Si岛的各构型的总能量和吸附能,并计算了Si-in-3N1Ti构型转向Ti-in-3N1Si构型的两种演变方式所对应的激活能。计算结果表明:在3N1Ti1Si的几种构型中,Ti-in-3N1Si构型是最低能量的稳定结构,这种构型是由SiN相从TiN相中分离出来而形成的;两种演变方式中以Si粒子迁...
Ab-initio calculations for the beta-tin diamond transition in Silicon: comparing theories with experiments
Ab-initio calculations for the beta-tin diamond transition Silicon:
2010/11/19
We investigate the pressure-induced metal-insulator transition from diamond to β-tin in bulk Silicon,using quantum Monte Carlo (QMC) and density functional theory (DFT) approaches. We show
that it is...
Nanopattern-stimulated superconductor-insulator transition in thin TiN films
Nanopattern-stimulated superconductor-insulator transition thin TiN films
2010/11/18
We present the results of the comparative study of the influence of disorder on transport prop-
erties in continuous and nanoperforated TiN films. We show that nanopatterning turns a thin
TiN film i...
We report resonant ultrasound spectroscopy (RUS), dilatometry/magnetostriction, magnetotransport,magnetization, speci c-heat, and 119Sn Mossbauer spectroscopy measurements on SnTe and Sn0:995Cr0:005T...
Thermodynamical insight on the role of additives in shifting the equilibrium between white and grey tin
white tin grey tin Debye temperature equilibrium transition
2010/11/19
In this study methods of statistical thermodynamics were applied to white tin –grey tin equilibrium to find if there is any correlation between Debye temperature of an additive and its effect on the e...
Skyrme-Hartree-Fock Description of the Dipole Strength in Neutron-Rich Tin Isotopes
Skyrme-Hartree-Fock Description Dipole Strength Neutron-Rich Tin Isotopes
2011/1/7
Low-energy E1 strength in neutron-rich 132−164Sn isotopes is analyzed in the framework of the Skyrme random phase approximation (RPA) with different Skyrme forces. A double folding procedure is ...
介绍了中国散裂中子源（CSNS）快循环同步加速器（RCS）中四极陶瓷真空盒内表面镀TiN膜技术与成膜系统装置。采用磁控溅射法，通过在绝缘体长直管道外表面安装金属屏幕罩来提供同轴电场的方法，解决了镀膜均匀性的问题。镀膜样品Ti、N比在0.9~1.1范围内，膜厚为100 nm左右，附着力达到要求，总体满足设计指标，完成了CSNS四极陶瓷真空盒样机的镀膜。
Pairing gap energy correction in Shell model for the neutron-rich tin isotopes
132Sn region Oxbash code Effective interaction
2010/7/8
The region in the vicinity of 132Sn, gathering numerous isotopes of important masses, shows lots of interestsm for explaining the most interesting phenomena. It offers among others the possibility to ...
Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
Thin films ITO ARE
2010/7/8
Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for fi...