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硼掺杂拓扑绝缘体Bi2Se3单晶的电输运性质研究
Bi2Se3 掺杂 纳米带 电输运性质
2022/3/28
本文首次报道了用自助溶剂法(self-flux)制备优良的硼(B)掺杂硒化铋(Bi2BxSe3-x)样品的探索。实验结果显示掺杂样品中大部分B是以替代Se位方式存在，少量B以插入Bi2Se3晶格或范德瓦尔斯间隙的形式存在。当B的含量逐渐增加时，Bi2Se3的晶格常数c先减小后增加，且样品具有清晰的层状结构。掺杂量x=0.05的样品局部区域出现纳米带结构，同时该样品在低温下出现了明显的金属-绝缘转变...
Suspension and Measurement of Graphene and Bi2Se3 Atomic Membranes
Suspension Measurement of Graphene Bi2Se3 Atomic Membranes
2010/11/22
Coupling high quality, suspended atomic membranes to specialized electrodes enables investigation of many novel phenomena, such as spin or Cooper pair transport in these two
dimensional systems. Howe...
Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit
Electron interaction-driven two dimensional limit
2010/11/18
We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from
one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low
temperatures, the film ...
Transport property measurements of Bi2Se3 crystal grown by Bridgman method
Crystal growth transport properties thermoelectric materials atomic force microscopy
2010/4/8
This paper deals with the growth of Bi2Se3 crystal by newly designed experimental set-up of Bridgman technique in our laboratory. Grown crystal is characterized by EDAX (Energy Dispersive Analysis of ...